1 2 3 absolute maximum ratings ( tj = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage sine wave, 50 to 60 hz 800 v i t(rms) r.m.s on-state current t j = 1 25 c , full sine wave 12 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 120/126 a i 2 t i 2 t tp = 10ms 72 a 2 s p g(av) average gate power dissipati on tj=125c 1 w i gm peak gate current t j =125c 2 a t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c july , 2010. rev. 2 1/6 tf12a80 standard triac i t(rms) = 12 a i tsm = 126a v drm = 800v to-220f copyright @ apollo electron co., ltd. all rights reserved. 2.t2 3.gate 1.t1 symbol features repetitive peak off-state voltage : 800v r.m.s on-state current ( i t(rms) = 1 a ) high commutation dv/dt general description this device is suit able for low po wer ac switching applicat ion, phase control application such a s fan speed and temperature modulation control, lighting co ntrol and static switchin g relay where high sensi- tivity is required in all four quadrants. rrent ( i t(rms) = 1 a ) this device may substitute for bta12-600, btb12-600, bt138-600, bcr12cm12l, TM1261M/s series.
electrical characteristics (tj=25 c unless otherwise specified) symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave tj = 125 c --- --- 2 .0 ma v tm peak on-state voltage i tm = 17 a, tp=3 80? --- --- 1.55 v i + gt1 gate trigger current v d = 12 v, r l =30 30 ma i - gt1 30 i - gt3 30 v + gt1 gate trigger voltage v d = 12 v, r l =30 1.5 v v - gt1 1.5 v - gt3 1.5 v gd non-trigger gate voltage t j = 125 c, v d = v drm rl=3.3k 0.2 - v dv/dt critical rate of rise off-state voltage t j = 125 c v d =2/3 v drm 200 v/ ? i h holding current i t =0.2a -- 50 ma tf12a80 2/6
3/6 tf12a80 -50 0 50 100 150 0.1 1 10 v + gt1 v _ gt1 v gt (t o c) v _ gt3 v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 0 50 100 150 200 60hz 50hz surge on-state current [a] time (cycles) 0 2 4 6 8 10 12 14 70 80 90 100 110 120 130 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 02468101214 0 2 4 6 8 10 12 14 16 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 0 10 1 10 2 t j = 125 o c t j = 25 o c on-state current [a] on-state voltage [v] fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature 2 360 : conduction angle 2 360 : conduction angle 10 1 10 2 10 3 10 -1 10 0 10 1 v gd (0.2v) i gm (2 a) 25 p g (av) (1 w) p gm (5w) v gm (10v) gate voltage [v] gate current [ma]
tf12a80 4/6 -50 0 50 100 150 0.1 1 10 i _ gt3 i + gt1 i _ gt1 i gt (t o c) i gt (25 o c) junction temperature [ o c] 10 -2 10 -1 10 0 10 1 10 2 0.1 1 10 transient thermal impedance [ o c/w] time (sec) fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature
tf12a80 5/6 to-220f package dimension symbol inches millimeters min ty p max min t y p a 9.88 10.08 10.28 25. 10 25.60 26. 11 b 15.30 15 .50 15. 70 38. 86 39.37 39. 88 c 2.95 3. 00 3.0 5 7. 49 7.6 2 7. 7 5 d 10.30 1 0 .50 10.70 26. 16 26.67 27. 18 e 0.95 1. 08 1.2 0 2. 41 2.7 4 3.05 f 1.81 1. 84 1.8 7 4. 60 4.6 7 4.75 g 0.50 0. 70 0.9 0 1. 27 1.7 8 2.29 h 3.00 3. 20 3.4 0 7. 62 8.1 3 8.6 4 i 4.35 4. 45 4.5 5 1 1.05 1 1.30 1 1. 56 j 6.20 6. 40 6.6 0 1 5.75 16.26 1 6.76 k 0.41 0 . 51 0.6 1 1. 03 1.2 8 1.54 l 2.30 2. 50 2.7 0 5. 84 6.3 5 6.8 6 m 2. 53 2 . 73 2.9 3 6 . 43 6.9 3 7.44 n 2.34 2 . 54 2.7 4 5. 94 6. 4 5 6.9 6
dim. mm inch min. typ. max. min. typ. max. a 10.4 10.6 0.409 0.417 b 6.18 6.44 0.243 0.254 c 9.55 9.81 0.376 0.386 d 8.4 8.66 0.331 0.341 e 6.05 6.15 0.238 0.242 f 1.26 1.36 0.050 0.054 g 3.17 3.43 0.125 0.135 h 1.87 2.13 0.074 0.084 i 2.57 2.83 0.101 0.111 j2 . 5 4 0 . 1 0 0 k5 . 0 8 0 . 2 0 0 l 2.51 2.62 0.099 0.103 m 1.23 1.36 0.048 0.054 n 0.45 0.63 0.018 0.025 o 0.65 0.78 0.0025 0.031 p 5.0 0.197 3.7 0.146 1 3.2 0.126 2 1.5 0.059 to-220f package dimension, forming 1. t1 2. t2 3. gate a b c i g l 1 m e f 1 h k n o 2 3 j d 2 p 6/6 tf 12a80
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